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UF3C065080B3
Silicon Carbide MOSFET, Single, N Channel, 25 A, 650 V, 0.08 ohm, D2PAK
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| Quantity | Price |
|---|---|
| 1+ | $5.820 |
| 10+ | $5.820 |
| 25+ | $5.820 |
| 50+ | $5.820 |
| 100+ | $5.820 |
| 250+ | $5.820 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$5.82
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Product Information
ManufacturerONSEMI
Manufacturer Part NoUF3C065080B3
Newark Part No.47AK1753
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id25A
Drain Source Voltage Vds650V
On Resistance Rds(on)0.08ohm
Drain Source On State Resistance0.08ohm
Transistor Case StyleD2PAK
No. of Pins3Pins
Rds(on) Test Voltage12V
Gate Source Threshold Voltage Max5V
Power Dissipation115W
Power Dissipation Pd115W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.08ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
5V
Power Dissipation Pd
115W
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
25A
On Resistance Rds(on)
0.08ohm
Transistor Case Style
D2PAK
Rds(on) Test Voltage
12V
Power Dissipation
115W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate