Print Page
UJ3N065025K3S
Silicon Carbide MOSFET, Single, N Channel, 85 A, 650 V, 0.022 ohm, TO-247
Image is for illustrative purposes only. Please refer to product description.
923 In Stock
Need more?
120 Delivery in 1-3 Business Days(US stock)
803 Delivery in 2-4 Business Days(UK stock)
Order before 9pm
| Quantity | Price |
|---|---|
| 1+ | $15.220 |
| 5+ | $15.220 |
| 10+ | $15.220 |
| 25+ | $15.220 |
| 50+ | $15.220 |
| 100+ | $15.220 |
| 250+ | $15.220 |
Price for:Each
Minimum: 1
Multiple: 1
$15.22
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerONSEMI
Manufacturer Part NoUJ3N065025K3S
Newark Part No.47AK1795
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id85A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.022ohm
On Resistance Rds(on)0.022ohm
Transistor Case StyleTO-247
No. of Pins3Pins
Rds(on) Test Voltage2V
Gate Source Threshold Voltage Max11.5V
Power Dissipation441W
Power Dissipation Pd441W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
650V
On Resistance Rds(on)
0.022ohm
No. of Pins
3Pins
Gate Source Threshold Voltage Max
11.5V
Power Dissipation Pd
441W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
85A
Drain Source On State Resistance
0.022ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
2V
Power Dissipation
441W
Operating Temperature Max
175°C
SVHC
No SVHC (17-Jan-2023)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate