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Quantity | Price |
---|---|
1+ | $0.080 |
10+ | $0.080 |
25+ | $0.080 |
50+ | $0.080 |
100+ | $0.080 |
500+ | $0.080 |
1000+ | $0.080 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoCQY37N
Newark Part No.78Y9464
Technical Datasheet
Peak Wavelength950nm
Angle of Half Intensity12°
Diode Case StyleT-3/4 (1.8mm)
Radiant Intensity (Ie)800mW/Sr
Rise Time800ns
Fall Time tf-
Forward Current If(AV)50mA
Forward Voltage VF Max1.3V
Operating Temperature Min-25°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (07-Nov-2024)
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Product Overview
950nm infrared emitting diode in GaAs suitable for use in radiation source in near infrared range.
- Leaded package type
- T-¾ package form
- High reliability
- Angle of half intensity of ±12°
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- Package matches with detector BPW17N
Technical Specifications
Peak Wavelength
950nm
Diode Case Style
T-3/4 (1.8mm)
Rise Time
800ns
Forward Current If(AV)
50mA
Operating Temperature Min
-25°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
12°
Radiant Intensity (Ie)
800mW/Sr
Fall Time tf
-
Forward Voltage VF Max
1.3V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability