Print Page
IRFBE30PBF
Power MOSFET, N Channel, 800 V, 4.1 A, 3 ohm, TO-220, Through Hole
Image is for illustrative purposes only. Please refer to product description.
243 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $2.430 |
| 10+ | $2.240 |
| 25+ | $2.240 |
| 50+ | $2.090 |
| 100+ | $2.060 |
| 500+ | $1.940 |
| 1000+ | $1.880 |
| 2500+ | $1.850 |
Price for:Each
Minimum: 1
Multiple: 1
$2.43
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRFBE30PBF
Newark Part No.63J6695
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id4.1A
Drain Source On State Resistance3ohm
On Resistance Rds(on)3ohm
Transistor MountingThrough Hole
Power Dissipation Pd125W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-220
Power Dissipation125W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The IRFBE30PBF is a 800V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. The low thermal resistance contribute to its wide acceptance throughout the industry.
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
Applications
Industrial, Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
800V
Drain Source On State Resistance
3ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-220
No. of Pins
3Pins
Qualification
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
4.1A
On Resistance Rds(on)
3ohm
Power Dissipation Pd
125W
Gate Source Threshold Voltage Max
4V
Power Dissipation
125W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability