Print Page
Image is for illustrative purposes only. Please refer to product description.
17,175 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
Quantity | Price |
---|---|
1+ | $0.773 |
25+ | $0.637 |
100+ | $0.420 |
500+ | $0.353 |
1000+ | $0.284 |
2500+ | $0.271 |
10000+ | $0.262 |
25000+ | $0.258 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.86
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI1922EDH-T1-GE3
Newark Part No.64T4056
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id1.3A
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel1.3A
Continuous Drain Current Id P Channel1.3A
Drain Source On State Resistance N Channel0.165ohm
Drain Source On State Resistance P Channel0.165ohm
Transistor Case StyleSOT-363
No. of Pins6Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI1922EDH-T1-GE3 is a dual N-channel MOSFET intended for small to medium load applications where a miniaturized package is required. It is compatible with load switch for portable applications.
- Halogen-free
- ESD protected device
Applications
Industrial, Portable Devices, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
1.3A
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
1.3A
Drain Source On State Resistance P Channel
0.165ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.25W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
1.3A
Drain Source On State Resistance N Channel
0.165ohm
Transistor Case Style
SOT-363
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability