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SI2304BDS-T1-E3
Power MOSFET, N Channel, 30 V, 2.6 A, 0.07 ohm, TO-236, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSI2304BDS-T1-E3
Newark Part No.49AM1982
Product RangeTrenchFET Series
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.050 |
| 25+ | $0.647 |
| 50+ | $0.533 |
| 100+ | $0.420 |
| 250+ | $0.371 |
| 500+ | $0.322 |
| 1000+ | $0.291 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2304BDS-T1-E3
Newark Part No.49AM1982
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id2.6A
Drain Source On State Resistance0.07ohm
Transistor Case StyleTO-236
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation750mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeTrenchFET Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
2.6A
Transistor Case Style
TO-236
Rds(on) Test Voltage
10V
Power Dissipation
750mW
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.07ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
TrenchFET Series
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability