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SI2366DS-T1-GE3
MOSFET, N-CH, 30V, 5.8A, SOT-23 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 44 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.228 |
| 6000+ | $0.217 |
| 12000+ | $0.203 |
| 18000+ | $0.166 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$684.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI2366DS-T1-GE3
Newark Part No.86AK6270
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id5.8A
Drain Source On State Resistance0.036ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.2V
Power Dissipation2.1W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (04-Feb-2026)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.8A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
2.1W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.036ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.2V
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (04-Feb-2026)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (04-Feb-2026)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability