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SI3585CDV-T1-GE3
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.048 ohm
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| Quantity | Price |
|---|---|
| 1+ | $0.907 |
| 10+ | $0.551 |
| 25+ | $0.513 |
| 50+ | $0.476 |
| 100+ | $0.438 |
| 250+ | $0.399 |
| 500+ | $0.360 |
| 1000+ | $0.330 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.91
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI3585CDV-T1-GE3
Newark Part No.70AC6501
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id3.9A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds P Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Drain Source On State Resistance N Channel0.048ohm
Drain Source On State Resistance P Channel0.048ohm
Transistor Case StyleTSOP
No. of Pins6Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (21-Jan-2025)
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Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds
20V
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance P Channel
0.048ohm
No. of Pins
6Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
-
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
3.9A
Drain Source On State Resistance N Channel
0.048ohm
Transistor Case Style
TSOP
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability