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Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Quantity | Price |
---|---|
2000+ | $0.899 |
4000+ | $0.807 |
6000+ | $0.779 |
10000+ | $0.762 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$2,247.50
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI4564DY-T1-GE3
Newark Part No.86R3889
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id10A
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel10A
Continuous Drain Current Id P Channel10A
Drain Source On State Resistance N Channel0.0145ohm
Drain Source On State Resistance P Channel0.0145ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel3.1W
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The SI4564DY-T1-GE3 is a 40V Dual N and P-channel TrenchFET® Power MOSFET.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Technical Specifications
Channel Type
Complementary N and P Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
10A
Drain Source On State Resistance P Channel
0.0145ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.1W
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
10A
Drain Source On State Resistance N Channel
0.0145ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (3)
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Associated Products
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate