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SI5902BDC-T1-GE3
Dual MOSFET, N Channel, 30 V, 30 V, 4 A, 4 A, 0.053 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.855 |
| 4000+ | $0.767 |
| 6000+ | $0.740 |
| 10000+ | $0.724 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$2,565.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI5902BDC-T1-GE3
Newark Part No.86R3904
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id4A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel4A
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel0.053ohm
Drain Source On State Resistance P Channel0.053ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel3.12W
Power Dissipation P Channel3.12W
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
4A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
4A
Drain Source On State Resistance P Channel
0.053ohm
No. of Pins
8Pins
Power Dissipation P Channel
3.12W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
4A
Drain Source On State Resistance N Channel
0.053ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
3.12W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate