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SI6913DQ-T1-GE3
Dual MOSFET, P Channel, 12 V, 12 V, 4.9 A, 4.9 A, 0.016 ohm
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 77 week(s)
| Quantity | Price |
|---|---|
| 2000+ | $0.851 |
| 4000+ | $0.768 |
| 6000+ | $0.740 |
| 10000+ | $0.712 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$2,553.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI6913DQ-T1-GE3
Newark Part No.16P3808
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds N Channel12V
Continuous Drain Current Id4.9A
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel12V
Continuous Drain Current Id N Channel4.9A
Continuous Drain Current Id P Channel4.9A
Drain Source On State Resistance N Channel0.016ohm
Drain Source On State Resistance P Channel0.016ohm
Transistor Case StyleTSSOP
No. of Pins8Pins
Power Dissipation N Channel830mW
Power Dissipation P Channel830mW
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds P Channel
12V
Continuous Drain Current Id P Channel
4.9A
Drain Source On State Resistance P Channel
0.016ohm
No. of Pins
8Pins
Power Dissipation P Channel
830mW
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds
12V
Continuous Drain Current Id N Channel
4.9A
Drain Source On State Resistance N Channel
0.016ohm
Transistor Case Style
TSSOP
Power Dissipation N Channel
830mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate