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SI7120ADN-T1-GE3
Power MOSFET, N Channel, 60 V, 9.5 A, 0.021 ohm, PowerPAK 1212, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 1+ | $3.200 |
| 10+ | $2.490 |
| 25+ | $2.380 |
| 50+ | $2.240 |
| 100+ | $2.090 |
| 500+ | $1.880 |
| 1000+ | $1.640 |
Price for:Each
Minimum: 1
Multiple: 1
$3.20
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7120ADN-T1-GE3
Newark Part No.23T8523
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id9.5A
On Resistance Rds(on)0.0175ohm
Drain Source On State Resistance0.021ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd3.8W
Gate Source Threshold Voltage Max2.5V
Power Dissipation3.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The SI7120ADN-T1-GE3 is a 60VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch and synchronous rectification applications.
- 100% Rg tested
- 100% UIS tested
- Halogen-free
- -55 to 150°C Operating temperature range
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.5A
Drain Source On State Resistance
0.021ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
3.8W
Power Dissipation
3.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0175ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate