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SI7938DP-T1-GE3
Dual MOSFET, N Channel, 40 V, 60 A, 0.0048 ohm
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSI7938DP-T1-GE3
Newark Part No.35R6248
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Continuous Drain Current Id60A
Drain Source Voltage Vds40V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel60A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.0048ohm
Drain Source On State Resistance P Channel-
Transistor Case StylePowerPAK SO
No. of Pins8Pins
Power Dissipation N Channel3.5W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCLead
Product Overview
The SI7938DP-T1-GE3 is a 40V Dual N-channel TrenchFET® Power MOSFET. The N-channel MOSFET for switching applications are now available with die on resistances around 1mΩ and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
- 100% UIS Tested
Applications
Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Drain Source Voltage Vds
40V
Continuous Drain Current Id N Channel
60A
Drain Source On State Resistance N Channel
0.0048ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
3.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate