Print Page
SI9945BDY-T1-GE3
Dual MOSFET, N Channel, 60 V, 5.3 A, 0.046 ohm
Image is for illustrative purposes only. Please refer to product description.
4 In Stock
Need more?
Delivery in 2-4 Business Days(UK stock)
Order before 9pm EST standard shipping
| Quantity | Price |
|---|---|
| 1+ | $1.770 |
| 10+ | $1.420 |
| 25+ | $1.310 |
| 50+ | $1.200 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$8.85
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSI9945BDY-T1-GE3
Newark Part No.72R4255
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id5.3A
Drain Source Voltage Vds60V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel5.3A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel0.046ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel3.1W
Power Dissipation P Channel-
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (07-Nov-2024)
Product Overview
The SI9945BDY-T1-GE3 is a 60V Dual N-channel TrenchFET® Power MOSFET. Suitable for use in LCD TV CCFL inverter and load switch applications. The surface-mounted LITTLE FOOT® power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
- Halogen-free according to IEC 61249-2-21 definition
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.3A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
-
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id N Channel
5.3A
Drain Source On State Resistance N Channel
0.046ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
3.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (07-Nov-2024)
Technical Docs (3)
Alternatives for SI9945BDY-T1-GE3
1 Product Found
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability