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SIA910EDJ-T1-GE3.
Dual MOSFET, Dual N Channel, 12 V, 4.5 A, 2.8 mohm
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3,000 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.374 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$1,122.00
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerVISHAY
Manufacturer Part NoSIA910EDJ-T1-GE3.
Newark Part No.30AC0111
Technical Datasheet
Channel TypeDual N Channel
Drain Source Voltage Vds N Channel12V
Continuous Drain Current Id4.5A
Drain Source Voltage Vds12V
Drain Source Voltage Vds P Channel-
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel-
Drain Source On State Resistance N Channel2.8mohm
Drain Source On State Resistance P Channel-
Transistor Case StylePowerPAK SC-70
No. of Pins6Pins
Power Dissipation N Channel7.8W
Power Dissipation P Channel-
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (19-Jan-2021)
Technical Specifications
Channel Type
Dual N Channel
Continuous Drain Current Id
4.5A
Drain Source Voltage Vds P Channel
-
Continuous Drain Current Id P Channel
-
Drain Source On State Resistance P Channel
-
No. of Pins
6Pins
Power Dissipation P Channel
-
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
12V
Drain Source Voltage Vds
12V
Continuous Drain Current Id N Channel
4.5A
Drain Source On State Resistance N Channel
2.8mohm
Transistor Case Style
PowerPAK SC-70
Power Dissipation N Channel
7.8W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (19-Jan-2021)
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:No SVHC (19-Jan-2021)
Download Product Compliance Certificate
Product Compliance Certificate