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SISA12ADN-T1-GE3
Power MOSFET, N Channel, 30 V, 25 A, 0.0032 ohm, PowerPAK 1212, Surface Mount
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ManufacturerVISHAY
Manufacturer Part NoSISA12ADN-T1-GE3
Newark Part No.19X1955
Product RangeTrenchFET Gen IV Series
Technical Datasheet
833 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.127 |
| 10+ | $0.127 |
| 25+ | $0.127 |
| 50+ | $0.127 |
| 100+ | $0.127 |
| 500+ | $0.127 |
| 1000+ | $0.127 |
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Multiple: 1
$0.13
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISA12ADN-T1-GE3
Newark Part No.19X1955
Product RangeTrenchFET Gen IV Series
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id25A
On Resistance Rds(on)0.0032ohm
Drain Source On State Resistance0.0032ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.2V
Power Dissipation28W
Power Dissipation Pd28W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen IV Series
Qualification-
SVHCLead
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Product Overview
N-channel 30V (D-S) MOSFET suitable for use in switch mode power supplies, personal computers and servers, telecom bricks and VRM’s and POL.
- TrenchFET® Gen IV Power MOSFET
- 100% Rg and UIS tested
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.0032ohm
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
10V
Power Dissipation
28W
No. of Pins
8Pins
Product Range
TrenchFET Gen IV Series
SVHC
Lead
Channel Type
N Channel
Continuous Drain Current Id
25A
Drain Source On State Resistance
0.0032ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.2V
Power Dissipation Pd
28W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate