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SISS61DN-T1-GE3
MOSFET, P-CH, 20V, 111.9A, POWERPAK 1212 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3
Newark Part No.86AK6254
Product RangeTrenchFET Gen III Series
Available to Order
Manufacturer Standard Lead Time: 52 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.868 |
| 6000+ | $0.840 |
| 12000+ | $0.819 |
Price for:Each (Supplied on Full Reel)
Minimum: 3000
Multiple: 3000
$2,604.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS61DN-T1-GE3
Newark Part No.86AK6254
Product RangeTrenchFET Gen III Series
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id111.9A
Drain Source On State Resistance0.0035ohm
Transistor Case StylePowerPAK 1212
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max900mV
Power Dissipation65.8W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen III Series
Qualification-
SVHCTo Be Advised
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
111.9A
Transistor Case Style
PowerPAK 1212
Rds(on) Test Voltage
4.5V
Power Dissipation
65.8W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
20V
Drain Source On State Resistance
0.0035ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
900mV
No. of Pins
8Pins
Product Range
TrenchFET Gen III Series
SVHC
To Be Advised
Alternatives for SISS61DN-T1-GE3
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability