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SQJB60EP-T1_GE3
MOSFET, AEC-Q101, DUAL N-CH, POWERPAKSO
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoSQJB60EP-T1_GE3
Newark Part No.99Y9674
Product RangeTrenchFET Series
Technical Datasheet
Product Information
ManufacturerVISHAY
Manufacturer Part NoSQJB60EP-T1_GE3
Newark Part No.99Y9674
Product RangeTrenchFET Series
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id30A
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id N Channel30A
Continuous Drain Current Id P Channel30A
Drain Source On State Resistance N Channel0.01ohm
Drain Source On State Resistance P Channel10mohm
Transistor Case StylePowerPAK SO
No. of Pins6Pins
Power Dissipation N Channel48W
Power Dissipation P Channel48W
Operating Temperature Max175°C
Product RangeTrenchFET Series
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds
60V
Continuous Drain Current Id P Channel
30A
Drain Source On State Resistance P Channel
10mohm
No. of Pins
6Pins
Power Dissipation P Channel
48W
Product Range
TrenchFET Series
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
30A
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
30A
Drain Source On State Resistance N Channel
0.01ohm
Transistor Case Style
PowerPAK SO
Power Dissipation N Channel
48W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate