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TSFF5210
Infrared Emitter, High Speed, 870 nm, 10 °, T-1 3/4 (5mm), 15 mW/Sr, 15 ns, 15 ns
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| Quantity | Price |
|---|---|
| 1+ | $0.571 |
| 10+ | $0.569 |
| 25+ | $0.569 |
| 50+ | $0.569 |
| 100+ | $0.569 |
| 500+ | $0.522 |
| 1000+ | $0.522 |
| 2500+ | $0.522 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSFF5210
Newark Part No.54K7366
Technical Datasheet
Peak Wavelength870nm
Angle of Half Intensity10°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)15mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.5V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification Standard-
Product Range-
MSL-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The TSFF5210 is a 870nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in a clear, untinted plastic package. It is suitable for use in infrared video data transmission between camcorder and TV set, free air data transmission systems with high modulation frequencies or high data transmission rate requirements and smoke-automatic fire detectors.
- High speed
- High reliability
- High radiant power
- High radiant intensity
- 4960897
- Low forward voltage
- Suitable for high pulse current operation
- Good spectral matching with Si photodetectors
- 12MHz High modulation bandwidth (fc)
Technical Specifications
Peak Wavelength
870nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
-
MSL
-
Angle of Half Intensity
10°
Radiant Intensity (Ie)
15mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
1.5V
Operating Temperature Max
85°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate