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TSHG6210
Infrared Emitter, High Speed, 850 nm, 10 °, T-1 3/4 (5mm), 20 mW/Sr, 20 ns, 13 ns
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 13 week(s)
| Quantity | Price |
|---|---|
| 2500+ | $0.663 |
Price for:Each
Minimum: 4000
Multiple: 4000
$2,652.00
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSHG6210
Newark Part No.64R5033
Technical Datasheet
Peak Wavelength850nm
Angle of Half Intensity10°
Diode Case StyleT-1 3/4 (5mm)
Radiant Intensity (Ie)20mW/Sr
Rise Time20ns
Fall Time tf13ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.8V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The TSHG6210 is an infrared, 850nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, moulded in a clear, untinted plastic package. It is suitable for use in infrared radiation source for operation with CMOS cameras, high speed IR data transmission and smoke-automatic fire detectors.
- Package form: T-1¾
- Dimensions (in mm): Ø 5
- Peak wavelength: λp = 850nm
- High radiant intensity
- Angle of half intensity: ϕ = ±10°
- Low forward voltage
- Suitable for high pulse current operation
- High modulation bandwidth: fc = 18MHz
- Good spectral matching with CMOS cameras
Technical Specifications
Peak Wavelength
850nm
Diode Case Style
T-1 3/4 (5mm)
Rise Time
20ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Angle of Half Intensity
10°
Radiant Intensity (Ie)
20mW/Sr
Fall Time tf
13ns
Forward Voltage VF Max
1.8V
Operating Temperature Max
85°C
MSL
-
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate