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TSMF1020
Infrared Emitter, High Speed, 890 nm, 17 °, SMD, 30 mW/Sr, 30 ns, 30 ns
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| Quantity | Price |
|---|---|
| 1+ | $1.360 |
| 10+ | $1.030 |
| 25+ | $0.944 |
| 50+ | $0.861 |
| 100+ | $0.779 |
| 250+ | $0.723 |
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Product Information
ManufacturerVISHAY
Manufacturer Part NoTSMF1020
Newark Part No.58K2534
Technical Datasheet
Peak Wavelength890nm
Angle of Half Intensity17°
Diode Case StyleSMD
Radiant Intensity (Ie)30mW/Sr
Rise Time30ns
Fall Time tf30ns
Forward Current If(AV)20mA
Forward Voltage VF Max1.3V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Product Range-
SVHCNo SVHC (08-Jul-2021)
Product Overview
The TSMF1020 is a 890nm Infrared Emitting Diode in GaAlAs double hetero (DH) technology. It is moulded in clear, untinted plastic packages (with lens) for surface mounting (SMD). It is suitable for use in IrDA compatible data transmission, miniature light barrier, photointerrupters, optical switch, control and drive circuits, shaft encoders.
- High speed
- High radiant power
- ϕ = ±17° Angle of half intensity
- Low forward voltage
- Suitable for high pulse current operation
- Versatile terminal configurations
Technical Specifications
Peak Wavelength
890nm
Diode Case Style
SMD
Rise Time
30ns
Forward Current If(AV)
20mA
Operating Temperature Min
-40°C
Product Range
-
SVHC
No SVHC (08-Jul-2021)
Angle of Half Intensity
17°
Radiant Intensity (Ie)
30mW/Sr
Fall Time tf
30ns
Forward Voltage VF Max
1.3V
Operating Temperature Max
85°C
MSL
MSL 3 - 168 hours
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
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Product Compliance Certificate
Product traceability