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ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHD13003C,412
Newark Part No.30T3200
Technical Datasheet
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Product Information
ManufacturerWEEN SEMICONDUCTORS
Manufacturer Part NoPHD13003C,412
Newark Part No.30T3200
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max400V
Collector Emitter Voltage V(br)ceo400V
Continuous Collector Current1.5A
Power Dissipation2.1W
Power Dissipation Pd2.1W
DC Collector Current1.5A
Transistor Case StyleTO-92
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min17hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Product Overview
The PHD13003C is a NPN planar passivated Power Switching Transistor with integrated anti-parallel emitter-collector diode in a plastic single-ended leaded (through hole) package.
- High speed
- Fast switching
- High voltage capability
- High typical DC current gain
Applications
Industrial, Lighting, Power Management, Consumer Electronics
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
400V
Power Dissipation
2.1W
DC Collector Current
1.5A
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Collector Emitter Voltage Max
400V
Continuous Collector Current
1.5A
Power Dissipation Pd
2.1W
Transistor Case Style
TO-92
No. of Pins
3Pins
DC Current Gain hFE Min
17hFE
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate