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C3M0075120K
Silicon Carbide MOSFET, Single, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, TO-247
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ManufacturerWOLFSPEED
Manufacturer Part NoC3M0075120K
Newark Part No.12AC0677
Product RangeC3M Series
Technical Datasheet
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| 1+ | $12.840 |
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| 120+ | $12.840 |
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Product Information
ManufacturerWOLFSPEED
Manufacturer Part NoC3M0075120K
Newark Part No.12AC0677
Product RangeC3M Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id30.8A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.075ohm
On Resistance Rds(on)0.075ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max2.5V
Power Dissipation119W
Power Dissipation Pd119W
Operating Temperature Max150°C
Product RangeC3M Series
MSL-
SVHCTo Be Advised
Product Overview
- C3MTM SiC (Silicon Carbide) MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High speed switching with low capacitances
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density and system switching frequency
Technical Specifications
MOSFET Module Configuration
Single
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
0.075ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.5V
Power Dissipation Pd
119W
Product Range
C3M Series
SVHC
To Be Advised
Channel Type
N Channel
Continuous Drain Current Id
30.8A
Drain Source On State Resistance
0.075ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
15V
Power Dissipation
119W
Operating Temperature Max
150°C
MSL
-
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate