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BROADCOM AFBR-S4N44P163

Silicon Photomultiplier, 3.72mm x 3.72mm, 30µm/15060 Microcells, 420nm, WLCSP-32

BROADCOM AFBR-S4N44P163
BROADCOM AFBR-S4N44P163
BROADCOM AFBR-S4N44P163
BROADCOM AFBR-S4N44P163
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Manufacturer:
BROADCOM BROADCOM
Manufacturer Part No:
AFBR-S4N44P163
Newark Part No.:
95AC1004
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Product Range
AFBR-S4N44 Series SiPM Array
Technical Datasheet:
AFBR-S4N44P163   Datasheet
ECAD / MCAD
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Product Overview

AFBR-S4N44P163 is a 4×4 NUV-HD silicon photo multiplier array. It is used for ultra-sensitive precision measurements of single photons. The pitch of SiPMs is 4mm in both directions. High packing density of the single chips is achieved using through-silicon-via (TSV) technology. Larger areas can be covered with a pitch of 16mm by tiling multiple AFBR-S4N44P163 arrays almost without any edge losses. The passivation layer is made by a glass highly transparent down to UV wavelengths, resulting in a broad response in the visible light spectrum with high sensitivity towards blue- and near-UV region of the light spectrum. Applications include X-ray and gamma ray detection, gamma ray spectroscopy, safety and security, nuclear medicine, positron emission tomography, life sciences, flow cytometry, fluorescence – luminescence measurements, time correlated single photon counting, high energy physics, astrophysics.
  • High PDE of more than 55% at 420nm, high fill factors
  • Excellent SPTR and CRT
  • Excellent uniformity of breakdown voltage, 180mV (3 sigma)
  • Excellent uniformity of gain
  • With TSV technology (4-side tilable)
  • Size 15.9 × 15.9mm², cell pitch 30 × 30μm²
  • Highly transparent glass protection layer
  • Operating temperature range from -20°C to +50°C
  • Spectral range from 300 to 900nm, peak sensitivity wavelength is 420nm
  • 26.9V breakdown voltage, 26mV/K temperature coefficient of breakdown voltage

Product Information

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:
AFBR-S4N44 Series SiPM Array

:
3.72mm × 3.72mm

:
30µm

:
15060Microcells

:
420nm

:
WLCSP

:
32Pins

:
MSL 2 - 1 year

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Technical Documents (2)

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