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IXFN230N20T
Bipolar (BJT) Single Transistor, N Channel, 220 A, 200 V, 0.0075 ohm, 10 V, 5 V
Image is for illustrative purposes only. Please refer to product description.
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN230N20TCopy |
| Manufacturer Standard Lead Time | 31 weeks |
| Newark Part No. | 03AH0733 |
| Product Range | GigaMOS Series |
| Your Part Number | |
| Technical Datasheet |
Available to Order
Manufacturer Standard Lead Time: 31 week(s)
| Quantity | Price |
|---|---|
| 300+ | $39.660 |
| 600+ | $38.860 |
| 900+ | $38.070 |
| 1500+ | $37.280 |
| 3000+ | $36.490 |
| 7500+ | $35.970 |
| 15000+ | $35.960 |
Price for:Each
Minimum: 300
Multiple: 300
$11,898.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
| Manufacturer | LITTELFUSE |
|---|---|
| Manufacturer Part No | IXFN230N20TCopy |
| Manufacturer Standard Lead Time | 31 weeks |
| Newark Part No. | 03AH0733 |
| Product Range | GigaMOS Series |
| Technical Datasheet | |
| Channel Type | N Channel |
| Transistor Polarity | N Channel |
| Continuous Drain Current Id | 220A |
| Drain Source Voltage Vds | 200V |
| Drain Source On State Resistance | 0.0075ohm |
| On Resistance Rds(on) | 0.0075ohm |
| Rds(on) Test Voltage | 10V |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation Pd | 1.09kW |
| Power Dissipation | 1.09kW |
| Operating Temperature Max | 175°C |
| Product Range | GigaMOS Series |
| SVHC | To Be Advised |
Product Overview
N-channel enhancement mode avalanche rated fast intrinsic diode. It Is suitable for use in synchronous rectification, DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC choppers, AC motor drives, uninterruptible power supplies, high speed power switching applications.
- GigaMOS™ power MOSFET
- miniBLOC with aluminium nitride isolation
- Isolation voltage 2500V
- High current handling capability
- Low RDS(on)
- Easy to mount
- Space savings
- High power density
Technical Specifications
| Channel Type | N Channel |
|---|---|
| Continuous Drain Current Id | 220A |
| Drain Source On State Resistance | 0.0075ohm |
| Rds(on) Test Voltage | 10V |
| Power Dissipation Pd | 1.09kW |
| Operating Temperature Max | 175°C |
| SVHC | To Be Advised |
| Transistor Polarity | N Channel |
|---|---|
| Drain Source Voltage Vds | 200V |
| On Resistance Rds(on) | 0.0075ohm |
| Gate Source Threshold Voltage Max | 5V |
| Power Dissipation | 1.09kW |
| Product Range | GigaMOS Series |
Technical Docs (2)
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Legislation and Environmental
| US ECCN: | EAR99 |
|---|---|
| EU ECCN: | Unknown |
| RoHS Compliant: | Yes RoHS |
| RoHS Phthalates Compliant: | Yes RoHS |
| SVHC: | To Be Advised |
| Download Product Compliance Certificate | Product Compliance Certificate |