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NXH010P120MNF1PTG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 114 A, 1.2 kV, 0.0105 ohm, Module
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| Quantity | Price |
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| 1+ | $153.060 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH010P120MNF1PTG
Newark Part No.32AK4640
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id114A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0105ohm
Transistor Case StyleModule
No. of Pins18Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max2.9V
Power Dissipation250W
Operating Temperature Max175°C
Product Range-
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
114A
Drain Source On State Resistance
0.0105ohm
No. of Pins
18Pins
Gate Source Threshold Voltage Max
2.9V
Operating Temperature Max
175°C
SVHC
No SVHC (15-Jan-2018)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
20V
Power Dissipation
250W
Product Range
-
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
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