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SISS5710DN-T1-GE3
MOSFET, N-CH/150V/26.2A/POWERPAK 1212-8S ROHS COMPLIANT: YES
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ManufacturerVISHAY
Manufacturer Part NoSISS5710DN-T1-GE3
Newark Part No.47AK1683
Product RangeTrenchFET Gen V Series
Technical Datasheet
5,605 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $3.620 |
| 10+ | $2.590 |
| 25+ | $2.390 |
| 50+ | $2.200 |
| 100+ | $2.010 |
| 250+ | $1.850 |
| 500+ | $1.700 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 1
$3.62
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Product Information
ManufacturerVISHAY
Manufacturer Part NoSISS5710DN-T1-GE3
Newark Part No.47AK1683
Product RangeTrenchFET Gen V Series
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds150V
Continuous Drain Current Id26.2A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.0315ohm
Transistor Case StylePowerPAK 1212-8S
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation54.3W
Power Dissipation Pd54.3W
No. of Pins8Pins
Operating Temperature Max150°C
Product RangeTrenchFET Gen V Series
Qualification-
Automotive Qualification Standard-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
150V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
PowerPAK 1212-8S
Rds(on) Test Voltage
10V
Power Dissipation
54.3W
No. of Pins
8Pins
Product Range
TrenchFET Gen V Series
Automotive Qualification Standard
-
SVHC
Lead (21-Jan-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
26.2A
Drain Source On State Resistance
0.0315ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
54.3W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability