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SKM 75GB173D
IGBT Module, Half Bridge, 75 A, 3.9 V, 150 °C, SEMITRANS
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Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 75GB173D
Newark Part No.83F5011
Technical Datasheet
IGBT ConfigurationHalf Bridge
Transistor PolarityN Channel
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage3.9V
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd-
Power Dissipation-
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.7kV
Operating Temperature Max150°C
Transistor Case StyleSEMITRANS
IGBT TerminationStud
No. of Pins7Pins
Collector Emitter Voltage Max1.7kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
Technical Specifications
IGBT Configuration
Half Bridge
DC Collector Current
75A
Collector Emitter Saturation Voltage
3.9V
Power Dissipation Pd
-
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
IGBT Termination
Stud
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.7kV
Transistor Case Style
SEMITRANS
No. of Pins
7Pins
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Technical Docs (1)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate