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SKM 75GB173D
IGBT Module, Half Bridge, 75 A, 3.9 V, 150 °C, SEMITRANS
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Disponible sur commande
Délais d’approvisionnement standard du fabricant : 26 semaine(s)
Informations produit
FabricantSEMIKRON
Réf. FabricantSKM 75GB173D
Code Commande83F5011
Fiche technique
IGBT ConfigurationHalf Bridge
Transistor PolarityN Channel
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage3.9V
Collector Emitter Saturation Voltage Vce(on)1.7kV
Power Dissipation Pd-
Power Dissipation-
Collector Emitter Voltage V(br)ceo1.7kV
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Transistor Case StyleSEMITRANS
No. of Pins7Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.7kV
IGBT TechnologyNPT IGBT [Standard]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Spécifications techniques
IGBT Configuration
Half Bridge
DC Collector Current
75A
Collector Emitter Saturation Voltage
3.9V
Power Dissipation Pd
-
Collector Emitter Voltage V(br)ceo
1.7kV
Operating Temperature Max
150°C
No. of Pins
7Pins
Collector Emitter Voltage Max
1.7kV
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
Transistor Polarity
N Channel
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
1.7kV
Power Dissipation
-
Junction Temperature, Tj Max
150°C
Transistor Case Style
SEMITRANS
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Standard]
Product Range
-
Documents techniques (1)
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Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (15-Jun-2015)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit