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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=11mohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$28.610 10+$18.270 25+$17.670 50+$17.070 100+$16.480 | Single | N Channel | 104A | 750V | 11mohm | TO-247 | 4Pins | 12V | 5.5V | 357W | 175°C | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+$39.590 10+$32.860 25+$32.180 50+$31.530 100+$30.860 More Pricing... | Single | N Channel | 104A | 750V | 11mohm | D2PAK | 7Pins | 12V | 5.5V | 357W | 175°C | ||||||
