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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=410mohm
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Packaging
| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Cut Tape | 1+$16.290 10+$11.260 25+$10.420 50+$9.580 100+$8.730 | Single | N Channel | 7.6A | 1.7kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
Each (Supplied on Cut Tape) Cut Tape | 1+$12.900 10+$8.980 25+$8.210 50+$7.450 100+$6.680 More Pricing... | Single | N Channel | 7.6A | 1.2kV | 410mohm | D2PAK | 7Pins | 12V | 6V | 100W | 175°C | ||||||
