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Silicon Carbide (SiC) MOSFETs & Modules :
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Drain Source On State Resistance
=8700µohm
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$404.660 5+$399.660 10+$394.660 25+$386.760 | Three Level Inverter | - | N Channel | 155A | 2kV | - | 8700µohm | Module | 27Pins | 18V | 5.15V | 20mW | 175°C | EasyPACK 2B CoolSiC Series | ||||||
STARPOWER | Each | 1+$1,104.960 5+$1,093.310 10+$1,082.010 25+$1,036.330 | Half Bridge | Dual N Channel | Dual N Channel | 299A | 1.2kV | 0.0067ohm | 8700µohm | Module | - | 18V | 5.6V | - | 150°C | - | |||||
