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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
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| Compare | Manufacturer Part No | Order Code | Manufacturer / Description | Availability | Price for | Price | Quantity | MOSFET Module Configuration | Transistor Polarity | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | On Resistance Rds(on) | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation Pd | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+$35.090 5+$31.890 10+$28.680 25+$28.570 50+$28.460 More Pricing... | Single | N Channel | N Channel | 60A | 1.2kV | 0.039ohm | 0.056ohm | TO-247 | 3Pins | 20V | 2.97V | 348W | 348W | 175°C | EliteSiC Series | ||||||
Each | Pricing is unavailable. Please contact customer services. | Single | - | N Channel | 11A | 3.3kV | - | 0.416ohm | TO-247 | 4Pins | 20V | 2.97V | - | 131W | 150°C | - | ||||||
