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BSN20-7
Power MOSFET, N Channel, 50 V, 500 mA, 1.8 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoBSN20-7
Newark Part No.07AH3632
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.449 |
| 10+ | $0.291 |
| 25+ | $0.259 |
| 50+ | $0.226 |
| 100+ | $0.194 |
| 250+ | $0.173 |
| 500+ | $0.152 |
| 1000+ | $0.138 |
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSN20-7
Newark Part No.07AH3632
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id500mA
Drain Source On State Resistance1.8ohm
On Resistance Rds(on)1.3ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation600mW
Power Dissipation Pd600mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Product Overview
BSN20-7 is a N-channel enhancement mode field MOSFET. This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include backlighting, DC-DC converters, power management functions.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 50V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 500mA at TA=+25°C, steady state, TSP=+25°C
- Pulsed drain current at TSP=+25°C, TA=+25°C is 1.2A
- Power dissipation at TA=+25°C is 600mW
- Static drain-source on-resistance is 1.3ohm typ at VGS=10V, ID=0.22A, TA=+25°C
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
50V
Drain Source On State Resistance
1.8ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
600mW
No. of Pins
3Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
500mA
On Resistance Rds(on)
1.3ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
600mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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