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DMN62D1SFB-7B
MOSFET, N-CH, 60V, 0.41A, X1-DFN1006 ROHS COMPLIANT: YES
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D1SFB-7B
Newark Part No.28AK8640
Your Part Number
Technical Datasheet
6,765 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.684 |
| 10+ | $0.438 |
| 25+ | $0.391 |
| 50+ | $0.342 |
| 100+ | $0.295 |
| 250+ | $0.265 |
| 500+ | $0.233 |
| 1000+ | $0.195 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$3.42
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN62D1SFB-7B
Newark Part No.28AK8640
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id410mA
On Resistance Rds(on)1.4ohm
Drain Source On State Resistance1.4ohm
Transistor Case StyleX1-DFN1006
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Power Dissipation470mW
Power Dissipation Pd470mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
1.4ohm
Transistor Case Style
X1-DFN1006
Rds(on) Test Voltage
10V
Power Dissipation
470mW
No. of Pins
3Pins
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Transistor Polarity
N Channel
Continuous Drain Current Id
410mA
Drain Source On State Resistance
1.4ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
Power Dissipation Pd
470mW
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability