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DMN65D8L-7
Power MOSFET, N Channel, 60 V, 310 mA, 3 ohm, SOT-23, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 17 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.181 |
| 10+ | $0.127 |
| 25+ | $0.106 |
| 50+ | $0.087 |
| 100+ | $0.066 |
| 250+ | $0.066 |
| 500+ | $0.064 |
| 1000+ | $0.064 |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
$0.90
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN65D8L-7
Newark Part No.82Y6582
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id310mA
On Resistance Rds(on)2ohm
Drain Source On State Resistance3ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Power Dissipation Pd370mW
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation370mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
DMN65D8L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Typical applications include DC-DC converters, power-management functions, battery-operated systems and solid-state relays, drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Small surface-mount package, ESD protected gate
- Drain-source voltage is 60V at TA = +25°C
- Gate-source voltage is ±20V at TA = +25°C
- Continuous drain current is 310mA at TA = +25°C, steady state, VGS = 10V
- Pulsed drain current (10µs pulse, duty cycle = 1%) is 800mA at TA = +25°C
- Total power dissipation is 370mW at TA = +25°C
- SOT23 (standard) package
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2ohm
Transistor Case Style
SOT-23
Power Dissipation Pd
370mW
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
310mA
Drain Source On State Resistance
3ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
370mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate