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Quantity | Price |
---|---|
1+ | $0.319 |
10+ | $0.319 |
25+ | $0.318 |
50+ | $0.318 |
100+ | $0.318 |
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Multiple: 1
$0.32
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVN3306F
Newark Part No.98K4101
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id150mA
On Resistance Rds(on)5ohm
Drain Source On State Resistance5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd330mW
Gate Source Threshold Voltage Max2.4V
Power Dissipation330mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Alternatives for ZVN3306F
5 Products Found
Product Overview
The ZVN3306F is a N-channel enhancement mode Vertical DMOS FET.
- Complement to ZVP3306F
- AEC-Q101 Qualified
- PPAP capable
Applications
Power Management
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
5ohm
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
150mA
Drain Source On State Resistance
5ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
330mW
Power Dissipation
330mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate