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Quantity | Price |
---|---|
1+ | $0.118 |
10+ | $0.118 |
25+ | $0.118 |
50+ | $0.118 |
100+ | $0.118 |
250+ | $0.118 |
500+ | $0.118 |
1000+ | $0.118 |
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Multiple: 1
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXMN6A11G
Newark Part No.98K4136
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id4.4A
Drain Source On State Resistance0.12ohm
On Resistance Rds(on)0.14ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd3.9W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation3.9W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The ZXMN6A11G is a 60V N-channel Enhancement Mode DMOSFET designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Fast switching speed
- Low gate drive
- Low input capacitance
- AEC-Q101 qualified
- UL94V-0 Flammability rating
Applications
Power Management, Motor Drive & Control, Defence, Military & Aerospace
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.12ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
3.9W
Gate Source Threshold Voltage Max
1V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
4.4A
On Resistance Rds(on)
0.14ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
3.9W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (27-Jun-2024)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate