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ZXTP2041F
Bipolar (BJT) Single Transistor, PNP, 40 V, 1 A, 350 mW, SOT-23, Surface Mount
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1,075 In Stock
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| Quantity | Price |
|---|---|
| 1+ | $0.770 |
| 10+ | $0.609 |
| 25+ | $0.519 |
| 50+ | $0.447 |
| 100+ | $0.387 |
| 250+ | $0.340 |
| 500+ | $0.291 |
| 1000+ | $0.258 |
Price for:Each (Supplied on Cut Tape)
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Multiple: 5
$3.85
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZXTP2041F
Newark Part No.13M5714
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max40V
Collector Emitter Voltage V(br)ceo40V
Continuous Collector Current1A
Power Dissipation Pd350mW
Power Dissipation350mW
DC Collector Current1A
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
DC Current Gain hFE300hFE
No. of Pins3Pins
Transition Frequency150MHz
DC Current Gain hFE Min300hFE
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The ZXTP2041F is a PNP silicon planar medium power Bipolar Transistor combines high gain, high current operation and low saturation voltage making. It is ideal for power MOSFET gate driving and low loss power switching.
- Low saturation voltage for reduced power dissipation
- 1 to 2A High current capability
- -55 to 150°C Operating temperature range
Applications
Computers & Computer Peripherals, Power Management, Automation & Process Control, Industrial
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
40V
Power Dissipation Pd
350mW
DC Collector Current
1A
Transistor Mounting
Surface Mount
No. of Pins
3Pins
DC Current Gain hFE Min
300hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
40V
Continuous Collector Current
1A
Power Dissipation
350mW
Transistor Case Style
SOT-23
DC Current Gain hFE
300hFE
Transition Frequency
150MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
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Product Compliance Certificate
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