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BUT30V
Bipolar (BJT) Single Transistor, NPN, 200 V, 100 A, 250 W, ISOTOP, Module
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Modèle arrêté
Informations produit
FabricantSTMICROELECTRONICS
Réf. FabricantBUT30V
Code Commande03M2897
Fiche technique
Transistor PolarityNPN
Collector Emitter Voltage Max200V
Collector Emitter Voltage V(br)ceo200V
Continuous Collector Current100A
Power Dissipation250W
Power Dissipation Pd250W
DC Collector Current100A
Transistor Case StyleISOTOP
Transistor MountingModule
DC Current Gain hFE27hFE
No. of Pins4Pins
Transition Frequency-
DC Current Gain hFE Min27hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
Aperçu du produit
The BUT30V is a NPN Transistor Power Module in a fully insulated package (UL compliant) for easy mounting.
- High current power bipolar module
- Very low Rth junction case
- Specified accidental overload areas
- Low internal parasitic inductance
Applications
Industrial, Power Management, Motor Drive & Control, Maintenance & Repair
Spécifications techniques
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
200V
Power Dissipation
250W
DC Collector Current
100A
Transistor Mounting
Module
No. of Pins
4Pins
DC Current Gain hFE Min
27hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
200V
Continuous Collector Current
100A
Power Dissipation Pd
250W
Transistor Case Style
ISOTOP
DC Current Gain hFE
27hFE
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Documents techniques (3)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Dec-2015)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit