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G2R120MT33J-TR
Silicon Carbide MOSFET, Single, N Channel, 33 A, 3.3 kV, 0.156 ohm, TO-263 (D2PAK)
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
| Quantity | Price |
|---|---|
| 100+ | $167.360 |
Price for:Each (Supplied on Cut Tape)
Minimum: 800
Multiple: 800
$133,888.00
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Product Information
ManufacturerGENESIC
Manufacturer Part NoG2R120MT33J-TR
Newark Part No.14AM5526
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id33A
Drain Source Voltage Vds3.3kV
Drain Source On State Resistance0.156ohm
Transistor Case StyleTO-263 (D2PAK)
No. of Pins7Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max3.5V
Power Dissipation366W
Operating Temperature Max175°C
Product Range-
SVHCNo SVHC (17-Dec-2015)
Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
33A
Drain Source On State Resistance
0.156ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
3.5V
Operating Temperature Max
175°C
SVHC
No SVHC (17-Dec-2015)
Channel Type
N Channel
Drain Source Voltage Vds
3.3kV
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
20V
Power Dissipation
366W
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:To be advised
RoHS Phthalates Compliant:To be advised
SVHC:No SVHC (17-Dec-2015)
Download Product Compliance Certificate
Product Compliance Certificate