Print Page
AUIRF7343QTR
Dual MOSFET, Complementary N and P Channel, 55 V, 4.7 A, 0.043 ohm, SOIC, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Newark Part No.43AC2192
Product RangeHEXFET Series
Technical Datasheet
61 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
| Quantity | Price |
|---|---|
| 1+ | $3.380 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.38
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF7343QTR
Newark Part No.43AC2192
Product RangeHEXFET Series
Technical Datasheet
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds55V
Drain Source Voltage Vds N Channel55V
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id4.7A
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id P Channel4.7A
Drain Source On State Resistance N Channel0.043ohm
Drain Source On State Resistance P Channel0.043ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product RangeHEXFET Series
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (08-Jul-2021)
Product Overview
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Logic level gate drive
- Dual N and P channel MOSFET
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
55V
Continuous Drain Current Id
4.7A
Continuous Drain Current Id P Channel
4.7A
Drain Source On State Resistance P Channel
0.043ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds
55V
Drain Source Voltage Vds P Channel
55V
Continuous Drain Current Id N Channel
4.7A
Drain Source On State Resistance N Channel
0.043ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (08-Jul-2021)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (08-Jul-2021)
Download Product Compliance Certificate
Product Compliance Certificate