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AUIRFN8459TR
Dual MOSFET, N Channel, 40 V, 50 A, 0.0048 ohm, PQFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRFN8459TR
Newark Part No.13AC8121
Product RangeHEXFET Series
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 16 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $4.120 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$4.12
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Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRFN8459TR
Newark Part No.13AC8121
Product RangeHEXFET Series
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel50A
Continuous Drain Current Id P Channel50A
Drain Source On State Resistance N Channel0.0048ohm
Drain Source On State Resistance P Channel0.0048ohm
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation N Channel50W
Power Dissipation P Channel50W
Operating Temperature Max175°C
Product RangeHEXFET Series
QualificationAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
AUIRFN8459TR is a HEXFET® power MOSFET that utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications include 12V automotive systems, brushed DC motor, braking, and transmission.
- Advanced process technology, dual N-channel MOSFET
- Ultra low on-resistance, fast switching
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- Dual PQFN package
- Drain-to-source breakdown voltage is 40V at VGS = 0V, ID = 250µA, TJ = 25°C
- Static drain-to-source on-resistance is 4.8mohm typ at VGS = 10V, ID = 40A, TJ = 25°C
- Drain-to-source leakage current is 150µA at VDS = 40V, VGS = 0V, TJ = 125°C
- Total gate charge is 40nC typ at ID = 40A, TJ = 25°C
- Operating junction and storage temperature range from -55 to + 175°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
50A
Drain Source On State Resistance P Channel
0.0048ohm
No. of Pins
8Pins
Power Dissipation P Channel
50W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
50A
Drain Source On State Resistance N Channel
0.0048ohm
Transistor Case Style
PQFN
Power Dissipation N Channel
50W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate