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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
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No Longer Available
Product Information
ManufacturerINFINEON
Manufacturer Part NoBF998E6327HTSA1
Newark Part No.50Y1746
Technical Datasheet
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
RF Transistor CaseSOT-143
Operating Temperature Max150°C
Power Dissipation Pd200mW
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Jan-2023)
Product Overview
The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz.
- Short-channel transistor with high S/C quality factor
- Qualified according AEC-Q101
Technical Specifications
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Operating Temperature Max
150°C
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
RF Transistor Case
SOT-143
Power Dissipation Pd
200mW
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate