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BF998E6327HTSA1
RF FET Transistor, 12 V, 30 mA, 200 mW, TO-252
L'image a des fins d'illustration uniquement. Veuillez lire la description du produit.
Modèle arrêté
Informations produit
FabricantINFINEON
Réf. FabricantBF998E6327HTSA1
Code Commande50Y1746
Fiche technique
Drain Source Voltage Vds12V
Continuous Drain Current Id30mA
Power Dissipation200mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleTO-252
No. of Pins4Pins
RF Transistor CaseSOT-143
Operating Temperature Max150°C
Power Dissipation Pd200mW
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
MSLMSL 1 - Unlimited
SVHCNo SVHC (17-Jan-2023)
Aperçu du produit
The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz.
- Short-channel transistor with high S/C quality factor
- Qualified according AEC-Q101
Spécifications techniques
Drain Source Voltage Vds
12V
Power Dissipation
200mW
Operating Frequency Max
-
No. of Pins
4Pins
Operating Temperature Max
150°C
Channel Type
N Channel
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Continuous Drain Current Id
30mA
Operating Frequency Min
-
Transistor Case Style
TO-252
RF Transistor Case
SOT-143
Power Dissipation Pd
200mW
Transistor Mounting
Surface Mount
MSL
MSL 1 - Unlimited
Documents techniques (2)
Législation et Questions environnementales
US ECCN:EAR99
EU ECCN:Unknown
Conforme RoHS :Oui
RoHS
Conforme à la norme RoHS Phthalates:Oui
RoHS
SVHC :No SVHC (17-Jan-2023)
Télécharger le certificat de conformité du produit
Certificat de conformité du produit