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BSC110N06NS3GATMA1
Power MOSFET, N Channel, 60 V, 50 A, 11 mohm, SuperSOT, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC110N06NS3GATMA1
Newark Part No.47W3312
Also Known AsBSC110N06NS3 G, SP000453668
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 14 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.612 |
| 10+ | $0.580 |
| 100+ | $0.555 |
Price for:Each
Minimum: 1
Multiple: 1
$0.61
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC110N06NS3GATMA1
Newark Part No.47W3312
Also Known AsBSC110N06NS3 G, SP000453668
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
On Resistance Rds(on)0.009ohm
Drain Source On State Resistance11mohm
Transistor MountingSurface Mount
Power Dissipation Pd50W
Rds(on) Test Voltage10V
Transistor Case StyleSuperSOT
Gate Source Threshold Voltage Max3V
Power Dissipation50W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Product Overview
The BSC110N06NS3 G is an OptiMOS™ N-channel Power MOSFET perfect choice for synchronous rectification in switched mode power supplies (SMPS). It can be used for a broad range of industrial applications including solar micro inverter and fast switching DC-to-DC converter.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Ideal for fast switching applications
- MSL1 rated
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Optimized technology for DC-to-DC converters
- Superior thermal resistance
- Normal level
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Industrial, Consumer Electronics, Portable Devices, Communications & Networking, Computers & Computer Peripherals
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.009ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 3 - 168 hours
Transistor Polarity
N Channel
Continuous Drain Current Id
50A
Drain Source On State Resistance
11mohm
Power Dissipation Pd
50W
Transistor Case Style
SuperSOT
Power Dissipation
50W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate