Print Page
BSC118N10NSGATMA1.
Power MOSFET, N Channel, 100 V, 71 A, 0.0118 ohm, TDSON, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC118N10NSGATMA1.
Newark Part No.31AC8221
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 28 week(s)
Fulfilled by Avnet
Notify me when back in stock
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC118N10NSGATMA1.
Newark Part No.31AC8221
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id71A
Drain Source On State Resistance0.0118ohm
On Resistance Rds(on)0.0118ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd114W
Transistor Case StyleTDSON
Gate Source Threshold Voltage Max3V
Power Dissipation114W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0118ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
114W
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
71A
On Resistance Rds(on)
0.0118ohm
Rds(on) Test Voltage
10V
Transistor Case Style
TDSON
Power Dissipation
114W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate