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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC16DN25NS3GATMA1
Newark Part No.50Y1814
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id10.9A
Drain Source On State Resistance0.165ohm
On Resistance Rds(on)0.146ohm
Transistor Case StyleTDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation62.5W
Power Dissipation Pd62.5W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
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Product Overview
The BSC16DN25NS3 G is a N-channel Power MOSFET produce based on OptiMOS™ leading benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM and MSL 1 rated
- Highest efficiency
- Highest Power density
- Lowest board space consumption
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.165ohm
Transistor Case Style
TDSON
Rds(on) Test Voltage
10V
Power Dissipation
62.5W
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
10.9A
On Resistance Rds(on)
0.146ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
62.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate