Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoBSC196N10NSGATMA1
Newark Part No.60R2519
Also Known AsBSC196N10NS G, SP000379604
Technical Datasheet
246 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown. To order more than shown inventory, contact sales
Quantity | Price |
---|---|
1+ | $0.923 |
10+ | $0.922 |
100+ | $0.780 |
500+ | $0.724 |
1000+ | $0.676 |
Price for:Each
Minimum: 1
Multiple: 1
$0.92
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC196N10NSGATMA1
Newark Part No.60R2519
Also Known AsBSC196N10NS G, SP000379604
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id45A
Drain Source On State Resistance0.0196ohm
On Resistance Rds(on)0.0167ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd78W
Gate Source Threshold Voltage Max3V
Power Dissipation78W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC196N10NS G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Halogen-free
- MSL1 rated 2
Applications
Power Management, Audio, Motor Drive & Control, Industrial, Automotive
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0196ohm
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
45A
On Resistance Rds(on)
0.0167ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
78W
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Associated Products
1 Product Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate