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ManufacturerINFINEON
Manufacturer Part NoBSP135H6327XTSA1
Newark Part No.50Y1824
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $3.080 |
| 10+ | $1.980 |
| 25+ | $1.800 |
| 50+ | $1.620 |
| 100+ | $1.420 |
| 250+ | $1.280 |
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| 2000+ | $0.852 |
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSP135H6327XTSA1
Newark Part No.50Y1824
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds600V
Continuous Drain Current Id120mA
Drain Source On State Resistance45ohm
On Resistance Rds(on)25ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd1.8W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.4V
Power Dissipation1.8W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The BSP135 H6327 is a N-channel depletion-mode SIPMOS® Small-Signal-Transistor with 600VDS drain source voltage. Areas of application include power supply start-up power, overvoltage protection, in-rush-current limiter, off-line voltage reference. Also suitable for automotive applications.
- dV/dt rated
- Pb-free lead plating
- Qualified according to AEC Q101
- Halogen-free
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
600V
Drain Source On State Resistance
45ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
1.8W
Gate Source Threshold Voltage Max
1.4V
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
120mA
On Resistance Rds(on)
25ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate